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Technology Vertical dipping technoque is adapted to a horizontal furnace. The wafers are fixed in a substrate holder, backside to backside. When the layer-growth should start, the wafers are dipped into the first, then into the next, up to six different melts of the crucible. At the end of epi-process, the wafers are pulled out of the last melt, and cooled down to room temperature for unloading. |
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SOF
Optoelectronics GmbH, Gartenstr. 38, 52249 Eschweiler, Germany
Tel +49 (0)2403 519 333 , Fax +49 (0)2403 508 968 , eMail: info@sof-e.com
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