Features

• Horizontal LPE Quartz Tube

• 5 Heating Zones

• Constant Temperature Flat-Zone: 600 mm

• Temperatures up to 1.050 °C

• Temperature Regulation Accuracy: ± 0,5 °C

• Fully automatic Computer-Controlled Processing

• Data-Logging of all Process-Parameters

• Extremely homogeneous Doping by Using special Gas-Phase ”Showering”-Technique

• Suitable for GaP:N Epitaxial Processes

• Suitable for Wafer Diameters up to 4”

• Cycle Time: 24 h