Features

• Single or Twin-System

• Vertical LPE Quartz Tube

• 3 Heating Zones

• Constant Temperature Flat-Zone: 250 mm

• Temperatures up to 1050°C

• Temperature Regulation Accuracy: ± 0,5 °C

• Minimum Need of Space in Cleanroom: 1.2 x 1.2 m² (Single Version)

• High Homogeneity of Layer-Thickness by Horizontal Layer-Growth

• Fully automatic Computer-Controlled Processing

• Data-Logging of all Process-Parameters

• Suitable for Multi-Layer Epitaxial Processes

• Suitable for Wafer Diameter up to 4”

• Flexible Adaptation of Wafer-Capacity:
      Minimum 3 Wafers for Development
      Maximum 200 Wafers for Production