ESY–10 TTT

A highly flexible LPE Equipment for III-V Epitaxy.

Description

LPE Equipment for Flexible Use

The Key-Features of the SOF Optoelectronics ESY–10 Concept are a high Capacity combined with the Flexibility for various Types of LPE-Production Technologies. A Capacity of 50 Wafers for a Five-Melt-Process and 200 Wafers for a One-Melt-Process demonstrate the high Potential of this Type of Equipment.

In Addition to the standard ESY–10 Equipment for industrial Use, customer-designed Solutions with plenty of Options can be realised. The ESY–10 especially can be adapted to the Requirements of Research Institutes and Universities.

The ESY–10 can be designed as a one- or double- (twin) System to reduce the Size of Footprint in the Cleanroom.

Available Production Technologies

Standard Infrared
Power Infrared
Power IR (Low UF)
Power Window IR
Power Infrared for IrDA 870 nm
Power Infrared for IrDA 850 nm
Low-Doped GaAs

Technical Highlights

Single or Twin-System
Vertical LPE Quartz Tube
3 Heating Zones
Constant Temperature Flat-Zone: 250 mm
Temperatures up to 1,050°C
Temperature Regulation Accuracy: ± 0.5 °C

Min. Need of Space: 1.2 x 1.2 m²
High Homogeneity of Layer-Thickness by Horizontal Layer-Growth
Fully automatic Computer-
Controlled Processing
Data-Logging of all Process-Parameters

Suitable for Multi-Layer Epitaxial Processes
Suitable for Wafer Diameter up to 4″
Flexible Adaptation of Wafer-Capacity
Minimum of 3 Wafers for Development
Maximum of 200 Wafers for Production

The Telescope Heating Cassette

Loading position

Process position

Fast-cool position

The Graphite System of the ESY–10 TTT

In Principle the ESY–10 Graphite System consists of alternating fixed and movable graphite Plates with Hollows holding the Substrates. The System Capacity is determined by the Stack Height of the Graphite Plates. The Crucible is placed on Top of the Graphite Stack and contains the Melts for the epitaxial Process.

Fig. A: Filling Melt 1 into Melt Chambers of movable Graphite Plates.
Fig. B: Moving Melt 1 to Growth-Position above Wafer. Filling Melt 2 into next Melt Chambers.
Fig. C: Removing Melt 1. Moving Melt 2 to Growth Position above Wafers. Filling Melt 3 into next Melt Chambers etc.

Available LPE Production Technologies

Technology Type	Emission Wavelength	No. of Melts	Max. Capacity (wafers)	Process Duration (hrs)
Standard IR	940 nm	1	200	10
Power IR	870 nm	1	200	20
Power IR (Low UF)	870 nm	2	100	21
Power Window IR	930 nm	2	100	12
Power IrDA 870	870 nm	5	50	22
Power IrDA 850	850 nm	5	50	22